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SQJ974EP-T1_GE3

SQ Automotive Power MOSFETs Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified and produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in various packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK® SO-8, PowerPAK 8x8L, PowerPAK SO-8L, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W, as well as several space-saving, small-outline options. A full range of polarity options, including N-channel and P-channel co-packages, is also available. Vishay / Siliconix SQ Automotive Power MOSFETs are offered in a wide range of polarity options, including N-channel and P-channel co-packages.

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Dual
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	5 ns, 5 ns
Forward Transconductance - Min	27 S, 27 S
Id - Continuous Drain Current	30 A
Manufacturer	Vishay
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	PowerPAK-SO-8-4
Pd - Power Dissipation	48 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	30 nC
Qualification	AEC-Q101
Rds On - Drain-Source Resistance	21 mOhms, 21 mOhms
Rise Time	5 ns, 5 ns
Series	SQ
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET
Transistor Polarity	N-Channel
Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	20 ns, 20 ns
Typical Turn-On Delay Time	10 ns, 10 ns
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.5 V
Вес, г	0.5066