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SQJA38EP-T1-GE3

Semiconductors\Discrete SemiconductorsAutomotive N-Channel 40 V (D-S) 175 °C MOSFET. TrenchFET® power MOSFET

Brand	Vishay/Siliconix
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	57 ns
Forward Transconductance - Min	51 S
Id - Continuous Drain Current	60 A
Manufacturer	Vishay
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	PowerPAK-SO-8-4
Pd - Power Dissipation	68 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	48.2 nC
Qualification	AEC-Q101
Rds On - Drain-Source Resistance	6.7 mOhms
Rise Time	5 ns
Series	SQJA
Subcategory	MOSFETs
Technology	Si
Tradename	PowerPAK
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	35 ns
Typical Turn-On Delay Time	14 ns
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.4 V
Automotive Standard	AEC-Q101
Channel Type	N
Forward Diode Voltage	1.2V
Maximum Continuous Drain Current	60 A
Maximum Drain Source Resistance	6.7 mΩ
Maximum Drain Source Voltage	40 V
Maximum Gate Source Voltage	±20 V
Maximum Gate Threshold Voltage	2.4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	68 W
Minimum Gate Threshold Voltage	1.4V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	PowerPAK SO-8L
Pin Count	6
Transistor Configuration	Single
Typical Gate Charge @ Vgs	48.2 nC @ 10 V
Width	4.47mm