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SQM50034E-GE3

Semiconductors\Discrete SemiconductorsAutomotive N-Channel 60 V (D-S) 175 °C MOSFET. TrenchFET® power MOSFET Package with low thermal resistanceundefined

Automotive Standard	AEC-Q101
Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.5V
Maximum Continuous Drain Current	100 A
Maximum Drain Source Resistance	7.5 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	±20 V
Maximum Gate Threshold Voltage	3.5V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	150 W
Minimum Gate Threshold Voltage	2.5V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Transistor Configuration	Single
Typical Gate Charge @ Vgs	58 nC @ 10 V
Width	9.65mm
Automotive Qualification Standard	AEC-Q101
Configuration	Single
Continuous Drain Current (Id)	100 A
Drain-Source Voltage (Vds)	60 V
Fall Time	8 ns
Gate-Source Voltage	20 V
ON Resistance (Rds(on))	3.2 mOhm
Operating Temperature Max.	175 °C
Operating Temperature Min.	-55 °C
Packaging	Tape & Reel
Pins	3
Power Dissipation (Pd)	150 W
Rise Time	10 ns
Transistor Polarity	N-Channel
Turn-OFF Delay Time	30 ns
Turn-ON Delay Time	19 ns