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SQS660CENW-T1-GE3

Semiconductors\Discrete SemiconductorsThe Vishay TrenchFET automotive N-channel is 60 V power MOSFET. 100 % Rg and UIS tested

Brand	Vishay/Siliconix
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Fall Time	5 ns
Forward Transconductance - Min	26 S
Id - Continuous Drain Current	18 A
Manufacturer	Vishay
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	PowerPAK-1212-8W
Pd - Power Dissipation	62.5 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	17.4 nC
Rds On - Drain-Source Resistance	11.2 mOhms
Rise Time	4 ns
Series	SQ
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET
Transistor Polarity	N-Channel
Transistor Type	TrenchFET Power MOSFET
Typical Turn-Off Delay Time	20 ns
Typical Turn-On Delay Time	12 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Resistance	0.0112 Ω
Maximum Drain Source Voltage	60 V
Maximum Gate Threshold Voltage	2.5V
Mounting Type	Surface Mount
Number of Elements per Chip	2
Package Type	PowerPAK 1212-8W
Pin Count	8
Series	TrenchFET
Transistor Material	Si