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SSM3J334R,LF

Semiconductors\Discrete SemiconductorsP-канал 30V 4A (Ta) 1W (Ta) поверхностный монтаж SOT-23F

Base Product Number	TB62261 ->
Current - Continuous Drain (Id) @ 25В°C	4A (Ta)
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
ECCN	EAR99
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5.9nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 15V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1W (Ta)
Rds On (Max) @ Id, Vgs	71mOhm @ 3A, 10V
RoHS Status	RoHS Compliant
Series	U-MOSVI ->
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	2V @ 100ВµA
Brand	Toshiba
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Forward Transconductance - Min	2.3 S
Id - Continuous Drain Current	4 A
Manufacturer	Toshiba
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	SOT-23F-3
Pd - Power Dissipation	1 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	5.9 nC
Rds On - Drain-Source Resistance	136 mOhms
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	22 ns
Typical Turn-On Delay Time	13 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	800 mV