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SSM3J351R,LF, Small-signal MOSFET ID -3.5A, -60V VDSS

Semiconductors\Discrete Semiconductors60V 3.5A 2W 134mOhm@10V,1A 2V@1mA P Channel SOT-23F MOSFETs

Brand	Toshiba
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Id - Continuous Drain Current	3.5 A
Manufacturer	Toshiba
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	SOT-23F-3
Pd - Power Dissipation	2 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	15.1 nC
Qualification	AEC-Q101
Rds On - Drain-Source Resistance	164 mOhms
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	100 ns
Typical Turn-On Delay Time	32 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-20 V, +10 V
Vgs th - Gate-Source Threshold Voltage	800 mV
Current - Continuous Drain (Id) @ 25В°C	3.5A(Ta)
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	660pF @ 10V
Manufacturer	Toshiba Semiconductor and Storage
Mounting Type	Surface Mount
Operating Temperature	150В°C
Package / Case	SOT-23-3 Flat Leads
Packaging	Tape & Reel(TR)
Part Status	Active
Power Dissipation (Max)	2W(Ta)
Rds On (Max) @ Id, Vgs	134mOhm @ 1A, 10V
Series	U-MOSVI
Supplier Device Package	SOT-23F
Technology	MOSFET(Metal Oxide)
Vgs (Max)	+10V, -20V
Vgs(th) (Max) @ Id	2V @ 1mA