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SSM3K09FU,LF, Small-signal MOSFET ID 0.4A, VDSS 30V

Semiconductors\Discrete Semiconductorsπ-MOS VI MOSFETs Toshiba π-MOS VI MOSFETs are Low Voltage Gate Drive devices offered in both P-channel and N-channel polarity and in single- and dual-channel variants. These devices provide a high drain current rating, low capacitance, low on-resistance, and fast switching. The π-MOS VI MOSFETs drive a 2.5V minimum to 20V maximum gate voltage. Toshiba π-MOS VI MOSFETs are offered in CST3-3, ES6-6, SOT-323-3, SOT-346-3, SOT-353-5, SOT-363-6, SOT-416-3, SOT-553-5, SOT-723-3, SOT-883-3, and TO-263MOD-3 package types for design flexibility. These small surface-mounted packages are ideal for high-density applications.

Brand	Toshiba
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Id - Continuous Drain Current	400 mA
Manufacturer	Toshiba
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	SOT-323-3
Pd - Power Dissipation	150 mW
Product Category	MOSFETs
Product Type	MOSFETs
Rds On - Drain-Source Resistance	500 mOhms
Subcategory	Transistors
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	68 ns
Typical Turn-On Delay Time	72 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.1 V