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SSM3K345R,LF
Semiconductors\Discrete SemiconductorsSemi Power MOSFETs Toshiba Semi Power MOSFETs are designed with advanced technologies, achieving low RON characteristics. The Semi Power MOSFETs are very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.
| Brand | Toshiba |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Id - Continuous Drain Current | 4 A |
| Manufacturer | Toshiba |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package/Case | SOT-23F-3 |
| Pd - Power Dissipation | 2 W |
| Product Category | MOSFETs |
| Product Type | MOSFETs |
| Qg - Gate Charge | 3.6 nC |
| Rds On - Drain-Source Resistance | 25 mOhms |
| Subcategory | Transistors |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 45 ns |
| Typical Turn-On Delay Time | 25 ns |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage | 400 mV |
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