Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
SSM3K35AMFV,L3F, LowON Res MOSFET ID=.25A VDSS=20V
Semiconductors\Discrete Semiconductors
| Brand | Toshiba |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 8000 |
| Fall Time | 5.5 ns |
| Forward Transconductance - Min | 0.5 S |
| Id - Continuous Drain Current | 250 mA |
| Manufacturer | Toshiba |
| Maximum Operating Temperature | +150 C |
| Mounting Style | SMD/SMT |
| Number Of Channels | 1 Channel |
| Package / Case | VESM-3 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 500 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 340 pC |
| Rds On - Drain-Source Resistance | 750 mOhms |
| Rise Time | 2 ns |
| Series | SSM3K35AM |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | U-MOSIII |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 6.5 ns |
| Typical Turn-On Delay Time | 2 ns |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs Th - Gate-Source Threshold Voltage | 350 mV |
Похожие товары
Цена по запросу
Цена по запросу
Цена по запросу
Цена по запросу
