Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
SSM3K35CTC,L3F
Semiconductors\Discrete Semiconductors
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EDA / CAD Models | SSM3K35CTC, L3F by Ultra Librarian |
EU RoHS | Compliant |
HTS | 8541.21.00.95 |
Material | Si |
Maximum Continuous Drain Current (A) | 0.25 |
Maximum Drain Source Resistance (MOhm) | 1100@4.5V |
Maximum Drain Source Voltage (V) | 20 |
Maximum Gate Source Leakage Current (nA) | 1000 |
Maximum Gate Source Voltage (V) | ±10 |
Maximum Gate Threshold Voltage (V) | 1 |
Maximum IDSS (uA) | 1 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 500 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Package Length | 0.6 |
Package Width | 0.8 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Product Category | Small Signal |
Supplier Package | CST-C |
Typical Fall Time (ns) | 5.5 |
Typical Gate Charge @ Vgs (nC) | 0.34@4.5V |
Typical Input Capacitance @ Vds (pF) | 18@10V |
Typical Rise Time (ns) | 2 |
Typical Turn-Off Delay Time (ns) | 6.5 |
Typical Turn-On Delay Time (ns) | 2 |