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SSM3K36MFV,L3F
Semiconductors\Discrete SemiconductorsU-MOSIII MOSFETs Toshiba U-MOSIII MOSFETs are single- and dual-channel MOSFETs ideal for high-speed switching applications. These Toshiba MOSFETs offer a low drain to source on-resistance and a low voltage gate drive.
| Brand | Toshiba |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 8000 |
| Id - Continuous Drain Current | 500 mA |
| Manufacturer | Toshiba |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package/Case | SOT-723-3 |
| Pd - Power Dissipation | 150 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 1.23 nC |
| Qualification | AEC-Q101 |
| Rds On - Drain-Source Resistance | 630 mOhms |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-channel |
| Typical Turn-Off Delay Time | 75 ns |
| Typical Turn-On Delay Time | 30 ns |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | -5 V, +5 V |
| Vgs th - Gate-Source Threshold Voltage | 350 mV |
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