Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
SSM6J507NU,LF
Semiconductors\Discrete Semiconductors
| Brand | Toshiba |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Id - Continuous Drain Current | 10 A |
| Manufacturer | Toshiba |
| Maximum Operating Temperature | +150 C |
| Mounting Style | SMD/SMT |
| Number Of Channels | 1 Channel |
| Package / Case | UDFN6B-6 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 2.5 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 13.6 nC |
| Rds On - Drain-Source Resistance | 20 mOhms |
| Series | SSM6J507 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | U-MOSVI |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 170 ns |
| Typical Turn-On Delay Time | 55 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V |
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