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SSM6K513NU,LF, Small Low ON Resistane MOSFETs

Semiconductors\Discrete SemiconductorsConfigurable High-Side Power Switch Solution Toshiba TCK401G Driver IC is an active-high MOSFET driver suitable for quick-charging and other applications requiring high current supply. Paired with the SSM6K513NU MOSFET, can create a high-efficiency load switch ideal for mobile and consumer applications, such as wearables and accessories. This combination also helps new products reduce heat from conduction loss by about 40 percent compared to Toshiba's conventional products. The pairing is ideal for those using USB Type-C™ connectors, making it possible to build a 100W load switch for a power supply circuit in a small space. TCK401G has built-in functions such as overvoltage protection, inrush current reducing, and auto output discharge. The SSM6K513NU MOSFET features the "U-MOSIX-H" trench metal-oxide-semiconductor (MOS) process and has an On-resistance (Rdson) of 6.5mΩ.

Brand	Toshiba
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	3000
Forward Transconductance - Min	6.8 S
Id - Continuous Drain Current	15 A
Manufacturer	Toshiba
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	UDFN-6
Pd - Power Dissipation	2.5 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	7.5 nC
Rds On - Drain-Source Resistance	6.5 mOhms
Series	SSM6K
Subcategory	MOSFETs
Technology	Si
Tradename	U-MOSIX-H
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	33 ns
Typical Turn-On Delay Time	28 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.1 V
Current - Continuous Drain (Id) @ 25°C	15A(Ta)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1130 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	150°C(TA)
Package / Case	6-WDFN Exposed Pad
Power Dissipation (Max)	1.25W(Ta)
Rds On (Max) @ Id, Vgs	8.9mOhm @ 4A, 10V
Supplier Device Package	6-UDFNB(2x2)
Technology	MOSFET(Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.1V @ 100µA