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STGD4H60DF Single Collector, Single Emitter, Single Gate IGBT, 4 A 600 V, 3-Pin DPAK, Surface Mount
Semiconductors\Discrete Semiconductors\IGBTsThe STMicroelectronics Trench gate field stop is an IGBT developed using an advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
| Configuration | Single Collector, Single Emitter, Single Gate |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Continuous Collector Current | 4 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 75 W |
| Mounting Type | Surface Mount |
| Number of Transistors | 1 |
| Package Type | DPAK |
| Pin Count | 3 |
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