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STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4

Semiconductors\Discrete Semiconductors\IGBTsThe STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure.

Channel Type	N
Maximum Collector Emitter Voltage	650 V
Maximum Continuous Collector Current	145 A
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	441 W
Number of Transistors	1
Package Type	TO247-4
Pin Count	4
Transistor Configuration	Single
Категория продукта	Биполярные транзисторы с изолированным затвором (I
Подкатегория	IGBTs
Размер фабричной упаковки	600
Серия	HB2
Тип продукта	IGBT Transistors
Торговая марка	STMicroelectronics
Упаковка	Tube
Current - Collector (Ic) (Max)	145A
Current - Collector Pulsed (Icm)	300A
ECCN	EAR99
Gate Charge	288nC
HTSUS	8541.29.0095
IGBT Type	Trench Field Stop
Input Type	Standard
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C (TJ)
Package	Tube
Package / Case	TO-247-4
Power - Max	441W
REACH Status	REACH Unaffected
Series	HB2 ->
Supplier Device Package	TO-247-4
Switching Energy	1.06mJ (on), 1.14mJ (off)
Td (on/off) @ 25В°C	23ns/141ns
Test Condition	400V, 100A, 3.3Ohm, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 100A
Voltage - Collector Emitter Breakdown (Max)	650V
Collector Emitter Saturation Voltage	1.55В
Collector Emitter Voltage Max	650В
Continuous Collector Current	145А
Power Dissipation	441Вт
Количество Выводов	4вывод(-ов)
Линейка Продукции	HB2
Максимальная Рабочая Температура	175°C
Монтаж транзистора	Through Hole
Стиль Корпуса Транзистора	TO-247
Вес, г	1