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STGW30V60F IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole
Semiconductors\Discrete Semiconductors\IGBTsThe Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching.
| Channel Type | N |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Continuous Collector Current | 30 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 260 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Package Type | TO-247 |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
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