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STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

Semiconductors\Discrete Semiconductors\IGBTsThe Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching.

Channel Type	N
Maximum Collector Emitter Voltage	600 V
Maximum Continuous Collector Current	120 A
Maximum Gate Emitter Voltage	±20V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	469 W
Minimum Operating Temperature	-40 °C
Mounting Type	Through Hole
Package Type	TO-247
Pin Count	3
Transistor Configuration	Single
Brand	STMicroelectronics
Collector- Emitter Voltage VCEO Max	600 V
Collector-Emitter Saturation Voltage	1.85 V
Configuration	Single
Continuous Collector Current at 25 C	120 A
Continuous Collector Current Ic Max	80 A
Factory Pack Quantity: Factory Pack Quantity	600
Gate-Emitter Leakage Current	250 nA
Manufacturer	STMicroelectronics
Maximum Gate Emitter Voltage	-20 V, 20 V
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Package/Case	TO-247-3
Packaging	Tube
Pd - Power Dissipation	469 W
Product Category	IGBT Transistors
Product Type	IGBT Transistors
Series	STGW80V60DF
Subcategory	IGBTs
Technology	Si
Collector Current (DC)	120(A)
Collector-Emitter Voltage	600(V)
Gate to Emitter Voltage (Max)	'±20(V)
Mounting	Through Hole
Operating Temperature (Max)	175C
Operating Temperature (Min)	-40C
Operating Temperature Classification	Automotive
Packaging	Rail/Tube
Rad Hardened	No
Collector Current (Ic)	120A
Collector-Emitter Breakdown Voltage (Vces)	600V
Diode Reverse Recovery Time (Trr)	60ns
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.3V@15V, 80A
Power Dissipation (Pd)	469W
Total Gate Charge (Qg@Ic,Vge)	448nC
Turn?off Delay Time (Td(off))	220ns
Turn?off Switching Loss (Eoff)	1mJ
Turn?on Delay Time (Td(on))	60ns
Turn?on Switching Loss (Eon)	1.8mJ
Type	FS(Field Stop)