Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
STGWA30HP65FB IGBT, 30 A 650 V, 3-Pin TO-247
Semiconductors\Discrete Semiconductors\IGBTsThe STMicroelectronics high speed HB series IGBT developed using an advanced proprietary trench gate fieldstop structure.
Channel Type | N |
Maximum Collector Emitter Voltage | 650 V |
Maximum Continuous Collector Current | 30 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 260 W |
Number of Transistors | 1 |
Package Type | TO-247 |
Pin Count | 3 |
Transistor Configuration | Common Emitter |