Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

STGWA30HP65FB2 IGBT 650 V, 3-Pin TO-247 long leads

Semiconductors\Discrete Semiconductors\IGBTsThe STMicroelectronics trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package, has a positive VCE(sat) temperature coefficient.

Channel Type	N
Maximum Collector Emitter Voltage	650 V
Maximum Gate Emitter Voltage	±30V
Maximum Power Dissipation	167 W
Number of Transistors	1
Package Type	TO-247 long leads
Pin Count	3
Transistor Configuration	Series
Base Product Number	STGWA30 ->
Current - Collector (Ic) (Max)	50A
Current - Collector Pulsed (Icm)	90A
ECCN	EAR99
Gate Charge	90nC
HTSUS	8541.29.0095
IGBT Type	Trench Field Stop
Input Type	Standard
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power - Max	167W
REACH Status	REACH Unaffected
Reverse Recovery Time (trr)	140ns
RoHS Status	ROHS3 Compliant
Series	HB2 ->
Supplier Device Package	TO-247 Long Leads
Td (on/off) @ 25В°C	-/71ns
Test Condition	400V, 30A, 6.8Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max)	650V
Brand	STMicroelectronics
Collector- Emitter Voltage VCEO Max	650 V
Collector-Emitter Saturation Voltage	1.65 V
Configuration	Single
Continuous Collector Current at 25 C	50 A
Continuous Collector Current Ic Max	50 A
Factory Pack Quantity	600
Gate-Emitter Leakage Current	250 nA
Manufacturer	STMicroelectronics
Maximum Gate Emitter Voltage	-20 V, 20 V
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Package/Case	TO-247-3
Packaging	Tube
Pd - Power Dissipation	167 W
Product Category	IGBT Transistors
Product Type	IGBT Transistors
Subcategory	IGBTs
Technology	Si