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Цена по запросу
STP140NF55, Транзистор полевой MOSFET N-канальный 55В 80А 300Вт
The STP140NF55 is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
• -55 to 175°C Operating junction temperature range
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status NRND
Product Category Power MOSFET
Process Technology STripFET II
Configuration Single
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 55
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 80
Maximum Drain Source Resistance (mOhm) 8@10V
Typical Gate Charge @ Vgs (nC) 142@10V
Typical Gate Charge @ 10V (nC) 142
Typical Input Capacitance @ Vds (pF) 5300@25V
Maximum Power Dissipation (mW) 300000
Typical Fall Time (ns) 45
Typical Rise Time (ns) 150
Typical Turn-Off Delay Time (ns) 125
Typical Turn-On Delay Time (ns) 30
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Packaging Tube
Automotive No
Pin Count 3
Supplier Package TO-220
Standard Package Name TO-220
Military No
Mounting Through Hole
Package Height 9.15(Max)
Package Length 10.4(Max)
Package Width 4.6(Max)
PCB changed 3
Tab Tab
Lead Shape Through Hole
Вес, г 2.5
ST Microelectronics
| Напряжение исток-сток макс. | 55В |
| Ток стока макс. | 80A |
| Сопротивление открытого канала | 8 мОм |
| Мощность макс. | 300Вт |
| Тип транзистора | N-канал |
| Пороговое напряжение включения макс. | 4В |
| Заряд затвора | 142нКл |
| Входная емкость | 5300пФ |
| Тип монтажа | Through Hole |
| Корпус | TO-220AB |
| Вес брутто | 2.72 г. |
| Наименование | STP140NF55 |
| Производитель | ST Microelectronics |
| Описание Eng | Field-effect transistor, N-channel, 55V 80A 300W |
| Тип упаковки | Tube (туба) |
| Нормоупаковка | 50 шт |
