Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
SUD19N20-90-E3, MOSFET 200V N-CH (D-S) 175 DEG.C
Semiconductors\Discrete Semiconductors
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 2000 |
| Fall Time | 60 ns |
| Id - Continuous Drain Current | 19 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Part # Aliases | SUD19N20-90-BE3 |
| Pd - Power Dissipation | 136 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 34 nC |
| Rds On - Drain-Source Resistance | 90 mOhms |
| Rise Time | 50 ns |
| Series | SUD |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | TrenchFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 30 ns |
| Typical Turn-On Delay Time | 15 ns |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
Похожие товары
Цена по запросу
Цена по запросу
Цена по запросу
Цена по запросу
