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Цена по запросу
SUP53P06-20-E3, 60V 53A 104.2W 19.5mohm @ 10V
Semiconductors\Discrete Semiconductors Описание Транзистор P-MOSFET, полевой, -60В, -46,8А, 66,7Вт, TO220AB Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 500 |
| Fall Time | 40 ns |
| Forward Transconductance - Min | 20 S |
| Id - Continuous Drain Current | 53 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package/Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 104.2 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 115 nC |
| Rds On - Drain-Source Resistance | 16 mOhms |
| Rise Time | 7 ns |
| Series | SUP |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | TrenchFET |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 70 ns |
| Typical Turn-On Delay Time | 10 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
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