Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

Заказать в 1 клик

T2N7002AK,LM

Semiconductors\Discrete SemiconductorsN-канал 60 В 200 мА (Ta) 320 мВт (Ta) поверхностный монтаж SOT-23

Base Product Number	2SC2655 ->
Current - Continuous Drain (Id) @ 25В°C	200mA (Ta)
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.35nC @ 4.5V
HTSUS	8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds	17pF @ 10V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max)	320mW (Ta)
Rds On (Max) @ Id, Vgs	3.9Ohm @ 100mA, 10V
RoHS Status	RoHS Compliant
Series	U-MOSVII-H ->
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	2.1V @ 250ВµA
Brand	Toshiba
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	24 ns
Forward Transconductance - Min	450 mS
Id - Continuous Drain Current	200 mA
Manufacturer	Toshiba
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	SOT-23-3
Pd - Power Dissipation	1 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	270 pC
Rds On - Drain-Source Resistance	3.9 Ohms
Rise Time	3 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	7 ns
Typical Turn-On Delay Time	2 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.1 V