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TEFT4300, фототранзистор 925нм 180кГц 3MM 30DEG FILTR-e2
фототранзисторы Описание Фототранзистор, p макс 925нм, 70В, 60°, d 0,875-1мкм
| Brand | Vishay Semiconductors |
| Collector- Emitter Voltage VCEO Max | 70 V |
| Collector-Emitter Breakdown Voltage | 70 V |
| Collector-Emitter Saturation Voltage | 0.3 V |
| Dark Current | 200 nA |
| Factory Pack Quantity | 5000 |
| Half Intensity Angle Degrees | 30 deg |
| Lens Color/Style | Black |
| Light Current | 3.2 mA |
| Manufacturer | Vishay |
| Maximum On-State Collector Current | 50 mA |
| Maximum Operating Temperature | +100 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Through Hole |
| Package / Case | T-1 |
| Packaging | Bulk |
| Pd - Power Dissipation | 100 mW |
| Peak Wavelength | 925 nm |
| Product | Phototransistors |
| Product Category | Phototransistors |
| Product Type | Phototransistors |
| Subcategory | Optical Detectors and Sensors |
| Type | IR Chip |
| Wavelength | 925 nm |
| кол-во в упаковке | 1000 |
| Wavelength Typ | 925nm; Viewing Angle |
| Angle of Half Sensitivity | 60 ° |
| Collector Current | 50mA |
| Maximum Dark Current | 200nA |
| Maximum Light Current | 3200µA |
| Maximum Wavelength Detected | 1000nm |
| Minimum Wavelength Detected | 875nm |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Number of Pins | 2 |
| Package Type | T-1 |
| Polarity | NPN |
| Spectral Range of Sensitivity | 875 → 1000 nm |
| Spectrums Detected | Infrared |
| Typical Fall Time | 2.3µs |
| Typical Rise Time | 2µs |
| Вес, г | 0.15 |
