Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
TEMT7000X01, Фототранзистор, 850 нм, 60 °, 100 мВт, 2 вывод(-ов), 0805
Оптоэлектроника и Дисплеи\Фототранзисторы Описание Фототранзистор, 0805, -p макс: 850нм, 20В, 60°, Линза: прозрачная
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.40.70.80 |
| Type | IR Chip |
| Phototransistor Type | Phototransistor |
| Lens Shape Type | Flat |
| Material | Silicon |
| Number of Channels per Chip | 1 |
| Polarity | NPN |
| Half Intensity Angle Degrees (°) | 120 |
| Viewing Orientation | Top View |
| Peak Wavelength (nm) | 850 |
| Cut-Off Filter | Visible Cut-off |
| Maximum Light Current (uA) | 675 |
| Maximum Collector Current (mA) | 20 |
| Maximum Dark Current (nA) | 100 |
| Maximum Emitter-Collector Voltage (V) | 7 |
| Maximum Collector-Emitter Voltage (V) | 20 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
| Maximum Power Dissipation (mW) | 100 |
| Fabrication Technology | NPN Transistor |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 100 |
| Packaging | Tape and Reel |
| Standard Package Name | SMD |
| Pin Count | 2 |
| Supplier Package | SMD |
| Mounting | Surface Mount |
| Package Height | 0.85 |
| Package Length | 2 |
| Package Width | 1.25 |
| PCB changed | 2 |
| Wavelength Typ | 850nm; Viewing Angle |
| Вес, г | 2 |
