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TGA2218-SM, RF Amplifier 13.4-16.5GHz 12W SSG 28dB GaN PAE 29%
RF & Wireless\RF Integrated Circuits\RF AmplifierTGA2218-SM 12W GaN Power Amplifier
Qorvo TGA2218-SM 12W Gallium Nitride (GaN) Power Amplifier is a high-power Monolithic Microwave Integrated Circuit (MMIC) amplifier. This amplifier is a packaged Ku-band and fabricated on 0.15um GaN by Silicon Carbide (SiC) process. The TGA2218-SM operates from 13.4GHz to 16.5GHz and provides more than 12W of saturated output power. The high-performance combination of the amplifier provides designers the flexibility to improve system performance while reducing size and cost. This power amplifier features more than 23dB of large signal gain, more than 28dB of small signal gain, and greater than 29% power-added efficiency. Qorvo TGA2218-SM power amplifier is ideally suited for military and commercial Ku-band radar and satellite communication systems.
Brand | Qorvo |
Factory Pack Quantity: Factory Pack Quantity | 25 |
Gain | 28 dB |
Input Return Loss | 15 dB |
Manufacturer | Qorvo |
Maximum Operating Temperature | +85 C |
Minimum Operating Temperature | -40 C |
Moisture Sensitive | Yes |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Operating Frequency | 13.4 GHz to 16.5 GHz |
Operating Supply Current | 225 mA |
Operating Supply Voltage | 20 V to 28 V |
Package / Case | 5.5 mm x 4.5 mm x 1.67 mm |
Packaging | Waffle |
Part # Aliases | TGA2218 1124471 |
Pd - Power Dissipation | 35 W |
Product Category | RF Amplifier |
Product Type | RF Amplifier |
Series | TGA2218 |
Subcategory | Wireless & RF Integrated Circuits |
Technology | GaN SiC |
Type | Power Amplifiers |
Вес, г | 16.92 |