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TGA2975-SM, RF Amplifier 2.7-3.5GHz 12W GaN PAE 52% Gain 31dB

RF & Wireless\RF Integrated Circuits\RF AmplifierTriQuint GaN Solutions TriQuint leads the market in developing gallium nitride (GaN) products and processes. TriQuint's GaN technology supports RF requirements up to 40GHz with drain bias up to 48V. GaN-based solutions offer greater power density, efficiency, frequency range and ruggedness. These qualities enable RF systems to use less electricity, operate with less input voltage and deliver greater RF output power while reducing amplifier size and part counts. TriQuint GaN technology enables a wide range of MMIC amplifiers, discrete transistors and switches for commercial and defense applications. TriQuint is redefining what is possible, helping customers reach further while bringing designs to market faster than ever before. TriQuint narrowband amplifiers provide higher power with smaller form factors compared to previous generations. TriQuint wideband amplifiers and discrete transistors deliver record-setting power and efficiency levels. TriQuint switches support next-generation radar, electronic warfare (EW) and instrumentation systems with greater efficiency in smaller packages or as die-level components. Learn More

Brand	Qorvo
Development Kit	TGA2975-SM_EVB
Factory Pack Quantity	25
Gain	31 dB
Input Return Loss	15 dB
Manufacturer	Qorvo
Maximum Operating Temperature	+85 C
Minimum Operating Temperature	-40 C
Moisture Sensitive	Yes
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Operating Frequency	2.7 GHz to 3.5 GHz
Operating Supply Current	175 mA
Operating Supply Voltage	20 V to 32 V
Package/Case	QFN-24
Packaging	Waffle
Part # Aliases	TGA2975 1128025
Pd - Power Dissipation	27 W
Product Category	RF Amplifier
Product Type	RF Amplifier
Subcategory	Wireless & RF Integrated Circuits
Supply Voltage - Max	32 V
Supply Voltage - Min	20 V
Technology	GaN
Type	Power Amplifiers
Вес, г	9