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TK33S10N1Z,LQ, UMOSVIII 100V 10m max(VGS=10V) DPAK

Semiconductors\Discrete SemiconductorsU-MOSVIII-H Low Voltage High Efficiency MOSFETs Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, and more. They are also designed for use in DC-DC power supplies for communication equipment, servers, and data centers. Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are fabricated with the latest Gen 8 trench MOS process, which helps to improve the efficiency of power supplies. Other features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. The series also includes automotive-qualified MOSFETs in a small package.

Brand	Toshiba
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	2000
Id - Continuous Drain Current	33 A
Manufacturer	Toshiba
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-252-3
Pd - Power Dissipation	125 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	28 nC
Qualification	AEC-Q101
Rds On - Drain-Source Resistance	9.7 mOhms
Series	TK33S10N1Z
Subcategory	MOSFETs
Technology	Si
Tradename	U-MOSVIII-H
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	2 V