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TN2404K-T1-E3, 240V 0.2A 4.0Ohm
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TN2404K-T1-E3, 240V 0.2A 4.0Ohm

Semiconductors\Discrete SemiconductorsThe Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 240V and a maximum gate-source voltage of 20V.
Channel Mode Enhancement
Channel Type N
Maximum Continuous Drain Current 200 mA
Maximum Drain Source Resistance 4 O
Maximum Drain Source Voltage 240 V
Maximum Gate Threshold Voltage 2V
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type TO-236
Pin Count 3
Series TN2404K
Brand Vishay Semiconductors
Configuration Single
Factory Pack Quantity: Factory Pack Quantity 3000
Fall Time 16 ns
Forward Transconductance - Min 1.6 S
Id - Continuous Drain Current 200 mA
Manufacturer Vishay
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Number of Channels 1 Channel
Package / Case SOT-23-3
Part # Aliases TN2404K-T1
Pd - Power Dissipation 360 mW
Product Category MOSFET
Product Type MOSFET
Qg - Gate Charge 4.87 nC
Rds On - Drain-Source Resistance 2.2 Ohms
Rise Time 12 ns
Series TN2
Subcategory MOSFETs
Technology Si
Tradename TrenchFET
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 35 ns
Typical Turn-On Delay Time 5 ns
Vds - Drain-Source Breakdown Voltage 257 V
Vgs - Gate-Source Voltage -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage 1.65 V
Automotive No
ECCN (US) EAR99
EU RoHS Compliant
Lead Shape Gull-wing
Maximum Continuous Drain Current (A) 0.2
Maximum Drain Source Resistance (mOhm) 4000@10V
Maximum Drain Source Voltage (V) 240
Maximum Gate Source Leakage Current (nA) 100
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 2
Maximum IDSS (uA) 1
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 360
Minimum Operating Temperature (°C) -55
Mounting Surface Mount
Packaging Tape and Reel
Part Status Active
PCB changed 3
PPAP No
Product Category Power MOSFET
Standard Package Name SOT
Supplier Package SOT-23
Typical Fall Time (ns) 16
Typical Gate Charge @ 10V (nC) 4.87
Typical Gate Charge @ Vgs (nC) 4.87@10V
Typical Rise Time (ns) 12
Typical Turn-Off Delay Time (ns) 35
Typical Turn-On Delay Time (ns) 5
Case SOT23
Drain current 0.16A
Drain-source voltage 240V
Gate charge 4.87nC
Gate-source voltage ±20V
Kind of channel enhanced
Kind of package reel, tape
Manufacturer VISHAY
On-state resistance
Polarisation unipolar
Power dissipation 0.23W
Technology TrenchFET®
Type of transistor N-MOSFET

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