Контакты
с 8:00 до 22:00
без выходных
8 (812) 920-85-20
многоканальный
sales@bastion24.ru Заказать звонок

Как мы работаем

По сертификату
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
TPH1R204PL,L1Q, MOSFET TRANS
Цена по запросу

TPH1R204PL,L1Q, MOSFET TRANS

Semiconductors\Discrete SemiconductorsU-MOSIX-H Low Voltage Enhancement Mode MOSFETs Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers and data centers. They feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the latest Gen-8 and Gen-9 trench MOS processes. The U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies. Learn More
Brand Toshiba
Channel Mode Enhancement
Configuration Single
Factory Pack Quantity: Factory Pack Quantity 5000
Fall Time 10 ns
Id - Continuous Drain Current 150 A
Manufacturer Toshiba
Maximum Operating Temperature +175 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Number of Channels 1 Channel
Package / Case SOP-8
Pd - Power Dissipation 132 W
Product Category MOSFET
Product Type MOSFET
Qg - Gate Charge 74 nC
Rds On - Drain-Source Resistance 2.1 mOhms
Rise Time 13 ns
Series U-MOSIX-H
Subcategory MOSFETs
Technology Si
Tradename U-MOSIX-H
Transistor Polarity N-Channel
Typical Turn-Off Delay Time 58 ns
Typical Turn-On Delay Time 33 ns
Vds - Drain-Source Breakdown Voltage 40 V
Vgs - Gate-Source Voltage -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage 1.4 V
Automotive No
Channel Type N
Maximum Continuous Drain Current - (A) 246
Maximum Drain Source Resistance - (mOhm) 1.24@10V
Maximum Drain Source Voltage - (V) 40
Maximum Gate Source Voltage - (V) ??20
Maximum Gate Threshold Voltage - (V) 2.4
Maximum Power Dissipation - (mW) 3000
Military No
Number of Elements per Chip 1
Operating Temperature - (??C) -55~175
Pin Count 8
Process Technology U-MOSIX-H
Standard Package Name SOP
Supplier Package SOP Advance
Typical Gate Charge @ 10V - (nC) 74
Typical Gate Charge @ Vgs - (nC) 74@10VI34@4.5V
Typical Input Capacitance @ Vds - (pF) 5500@20V

Дмитрий Тест

Хороший проц
Плюсы:
Да
Минусы:
Нет

Андрюшка

Нормуль
Плюсы:
Плюсы!

Заказать звонок

Заполните форму и мы перезвоним вам в течение 10 минут

Нажимая кнопку, я даю согласие на обработку персональных данных