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TPH3R70APL,L1Q

Semiconductors\Discrete SemiconductorsU-MOSIX-H MOSFETs Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, and flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers, and data centers. The MOSFETs feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the Gen-8 and Gen-9 trench MOS processes. Toshiba U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.

Brand	Toshiba
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	5000
Fall Time	19 ns
Id - Continuous Drain Current	150 A
Manufacturer	Toshiba
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package/Case	SOP-8
Pd - Power Dissipation	170 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	67 nC
Rds On - Drain-Source Resistance	3.7 mOhms
Rise Time	10 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	68 ns
Typical Turn-On Delay Time	21 ns
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.5 V