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TPN3R704PL,L1Q

Semiconductors\Discrete SemiconductorsU-MOSIX-H MOSFETs Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers, and data centers. They feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the Gen-8 and Gen-9 trench MOS processes. The U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.

Brand	Toshiba
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity: Factory Pack Quantity	5000
Fall Time	6.2 ns
Id - Continuous Drain Current	80 A
Manufacturer	Toshiba
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TSON-Advance-8
Pd - Power Dissipation	86 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	27 nC
Rds On - Drain-Source Resistance	6 mOhms
Rise Time	5.3 ns
Series	TPN3R704PL
Subcategory	MOSFETs
Technology	Si
Tradename	U-MOSIX-H
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	24 ns
Typical Turn-On Delay Time	14.7 ns
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Voltage	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage	1.4 V
Current - Continuous Drain (Id) @ 25°C	80A(Tc)
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 20 V
Mounting Type	Surface Mount
Operating Temperature	175°C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	630mW(Ta), 86W(Tc)
Rds On (Max) @ Id, Vgs	3.7mOhm @ 40A, 10V
Supplier Device Package	8-TSON Advance(3.1x3.1)
Technology	MOSFET(Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.4V @ 200µA