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TPWR7904PB,L1XHQ
Semiconductors\Discrete SemiconductorsAutomotive U-MOSIX-H Power MOSFETs
Toshiba Automotive U-MOSIX-H Power MOSFETs are 40V N-channel power MOSFETs ideal for automotive applications. These devices are housed in a small, low-resistance SOP Advance (WF) package. They feature low on-resistance, which can reduce conduction loss. The U-MOSIX-H series also lowers switching noise compared with Toshiba Electronic Devices and Storage Corporation’s previous series (U-MOSIV).
Brand | Toshiba |
Channel Mode | Enhancement |
Factory Pack Quantity: Factory Pack Quantity | 5000 |
Fall Time | 35 ns |
Id - Continuous Drain Current | 150 A |
Manufacturer | Toshiba |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | DSOP-Advance-8 |
Packaging | Reel, Cut Tape |
Part # Aliases | TPWR7904PB, L1XHQ(O |
Pd - Power Dissipation | 170 W |
Product Category | MOSFET |
Product Type | MOSFET |
Qg - Gate Charge | 85 nC |
Qualification | AEC-Q101 |
Rds On - Drain-Source Resistance | 790 uOhms |
Rise Time | 10 ns |
Series | UMOS IX |
Subcategory | MOSFETs |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 115 ns |
Typical Turn-On Delay Time | 23 ns |
Vds - Drain-Source Breakdown Voltage | 40 V |
Vgs - Gate-Source Voltage | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |