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Цена по запросу
TSFF5510
Электроэлемент870 nm 100 mA ±38° Through Hole High Speed Infrared Emitting Diode - T-1 3/4
Fall Time | 15(ns) |
Forward Voltage | 2.1(V) |
Mounting | Through Hole |
Operating Temp Range | -40C to 85C |
Operating Temperature Classification | Industrial |
Package Type | T-1 3/4 |
Peak Wavelength | 870(nm) |
Photodiode Material | InGaAs |
Pin Count | 2 |
Polarity | Forward |
Power Dissipation | 0.18(W) |
Rad Hardened | No |
Reverse Breakdown Voltage | 5(V) |
Rise Time | 15(ns) |
Type | Module |
Current - DC Forward (If) (Max) | 100mA |
Manufacturer | Vishay Semiconductor Opto Division |
Mounting Type | Through Hole |
Operating Temperature | -40В°C ~ 85В°C(TA) |
Orientation | Top View |
Package / Case | Radial |
Packaging | Bulk |
Part Status | Active |
Radiant Intensity (Ie) Min @ If | 16mW/sr @ 100mA |
Series | - |
Viewing Angle | 76В° |
Voltage - Forward (Vf) (Typ) | 1.3V |
Wavelength | 870nm |
Brand | Vishay Semiconductors |
Factory Pack Quantity | 4000 |
If - Forward Current | 100 mA |
Illumination Colour | Infrared |
Manufacturer | Vishay |
Maximum Operating Temperature | +85 C |
Minimum Operating Temperature | -40 C |
Mounting Style | Through Hole |
Power Rating | 180 mW |
Product Category | Infrared Emitters-High Power |
Product Type | IR Emitters(IR LEDs) |
Radiant Intensity | 32 mW/sr |
Rise Time | 15 ns |
Subcategory | Infrared Data Communications |
Vf - Forward Voltage | 1.45 V |
Wavelength | 870 nm |
Вес, г | 0.22 |