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TTA004B,Q
Semiconductors\Discrete Semiconductors Описание Транзистор биполярный TO225
| Base Product Number | TC7W02 -> |
| Current - Collector (Ic) (Max) | 1.5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 5V |
| ECCN | EAR99 |
| Frequency - Transition | 100MHz |
| HTSUS | 8541.29.0075 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | 150В°C (TJ) |
| Package | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Power - Max | 10W |
| RoHS Status | RoHS Compliant |
| Supplier Device Package | TO-126N |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 160V |
| кол-во в упаковке | 1 |
| Brand | Toshiba |
| Collector- Base Voltage VCBO | -160 V |
| Collector- Emitter Voltage VCEO Max | -160 V |
| Collector-Emitter Saturation Voltage | -500 mV |
| Configuration | Single |
| Continuous Collector Current | -1.5 A |
| DC Collector/Base Gain hfe Min | 140 |
| DC Current Gain hFE Max | 280 |
| Emitter- Base Voltage VEBO | -6 V |
| Factory Pack Quantity | 250 |
| Gain Bandwidth Product fT | 100 MHz |
| Manufacturer | Toshiba |
| Maximum DC Collector Current | -1.5 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 1.5 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | TTA004B |
| Technology | Si |
| Transistor Polarity | PNP |
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