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TW048N65C,S1F

Semiconductors\Discrete Semiconductors3rd Generation Silicon Carbide MOSFETs Toshiba 3rd Generation Silicon Carbide MOSFETs are designed for high-power industrial applications like 400V AC input AC-DC power supplies. Other applications include photovoltaic (PV) inverters, and bi-directional DC-DC converters for uninterruptible power supplies (UPS). These MOSFETs contribute to reducing power consumption and improving power density. This is due to SiC technology which allows devices to deliver higher voltages, faster switching, and lower On-resistance. Toshiba’s third generation chip design offers enhanced reliability in addition to input capacitance (CISS) of 4850pF (typical), a low gate-input charge (Qg) of 128nC (typical), and a drain-to-source On-resistance (RDS(ON)) of just 15mΩ or 30mΩ (typical).

Brand	Toshiba
Channel Mode	Enhancement
Factory Pack Quantity	30
Fall Time	32 ns
Id - Continuous Drain Current	40 A
Manufacturer	Toshiba
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package/Case	TO-247-3
Packaging	Tube
Pd - Power Dissipation	132 W
Product Category	SiC MOSFETs
Product Type	SiC MOSFETS
Qg - Gate Charge	41 nC
Rds On - Drain-Source Resistance	65 mOhms
Rise Time	43 ns
Subcategory	Transistors
Technology	SiC
Transistor Polarity	N-Channel
Typical Turn-Off Delay Time	68 ns
Typical Turn-On Delay Time	69 ns
Vds - Drain-Source Breakdown Voltage	650 V
Vgs - Gate-Source Voltage	-10 V, +25 V
Vgs th - Gate-Source Threshold Voltage	5 V