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VBPW34S, Photodiodes Gullwing 430-1100nm +/-65 deg
Sensors\Optical Sensors\Photodiodes Описание Точечный фотодиод, 940нм, 0,43-1,1мкм, 130°, Монтаж SMD
| Dark Current | 2nA (Typ) |
| Maximum Operating Temperature | 100в„ѓ |
| Minimum Operating Temperature | -40в„ѓ |
| Spectral Range | 430nm~1100nm |
| Wavelength | 940nm |
| Brand | Vishay Semiconductors |
| Factory Pack Quantity | 1000 |
| Fall Time | 100 ns |
| Half Intensity Angle Degrees | 65 deg |
| Height | 1.2 mm |
| If - Forward Current | 50 mA |
| Length | 6.4 mm |
| Manufacturer | Vishay |
| Mounting Style | SMD/SMT |
| Noise Equivalent Power - NEP | 4E-14 W/sqrt Hz |
| Packaging | Reel |
| Pd - Power Dissipation | 215 mW |
| Peak Wavelength | 940 nm |
| Photocurrent | 55 uA |
| Product | PIN Photodiodes |
| Product Category | Photodiodes |
| Rise Time | 100 ns |
| RoHS | Details |
| Type | Silicon PIN Photodiode |
| Vf - Forward Voltage | 1 V |
| Vr - Reverse Voltage | 60 V |
| Width | 3.9 mm |
| Amplifier Function | No |
| Diode Material | Si |
| Maximum Wavelength Detected | 1100nm |
| Minimum Wavelength Detected | 430nm |
| Mounting Type | Surface Mount |
| Number of Pins | 2 |
| Package Type | GW |
| Spectrums Detected | Infrared, Visible Light |
| Wavelength of Peak Sensitivity | 940nm |
