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VEMD5080X01, Photodiodes Top view 350-1100nm +/-65 deg
Sensors\Optical Sensors\Photodiodes Описание Точечный фотодиод, 950нм, 350-1100нм, 65°, Монтаж SMD
| Automotive | Yes |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Maximum Dark Current (nA) | 10 |
| Maximum Fall Time (ns) | 70 |
| Maximum Forward Voltage (V) | 1.3 |
| Maximum Operating Temperature (°C) | 110 |
| Maximum Power Dissipation (mW) | 215 |
| Maximum Reverse Voltage (V) | 20 |
| Maximum Rise Time (ns) | 70 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Surface Mount |
| Part Status | Active |
| PCB changed | 4 |
| Peak Wavelength (nm) | 950 |
| Photodiode Type | PIN |
| Pin Count | 4 |
| PPAP | Unknown |
| Standard Package Name | SMD |
| Supplier Package | SMD |
| Type | Chip |
| Amplifier Function | No |
| Automotive Standard | AEC-Q101 |
| Breakdown Voltage | 20V |
| Diode Material | Si |
| Minimum Wavelength Detected | 350nm |
| Mounting Type | Surface Mount |
| Number of Pins | 4 |
| Package Type | QFN |
| Spectrums Detected | Infrared |
| Typical Fall Time | 70ns |
| Typical Rise Time | 70ns |
| Wavelength of Peak Sensitivity | 950nm |
| Width | 4mm |
| Dark Current | 10(nA) |
| Fall Time | 70(ns) |
| Forward Voltage | 1.3(V) |
| Operating Temp Range | -40C to 110C |
| Operating Temperature Classification | Industrial |
| Packaging | Tape and Reel |
| Peak Wavelength | 950(nm) |
| Power Dissipation | 0.215(W) |
| Rad Hardened | No |
| Reverse Breakdown Voltage | 20(V) |
| Rise Time | 70(ns) |
| Вес, г | 0.36 |
