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"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
VEMT2000X01, 50mA NPN 20V 100mW 1nA 860nm ±15° -40°C~+100°C SMD,2.3x2.3mm PhototransIstors ROHS
Optoelectronics\Photoelements\PhototransistorsФототранзистор IR Chip Silicon 860nm Automotive 2-Pin SMD T / R
| Case | Gull wing |
| Collector-emitter voltage | 20V |
| LED diameter | 1.8mm |
| LED lens | black |
| LED version | reverse mount |
| Manufacturer | VISHAY |
| Mounting | SMD |
| Type of photoelement | phototransistor |
| Viewing angle | 15° |
| Wavelength | 790…970nm |
| Wavelength of peak sensitivity | 860nm |
| Automotive | Yes |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Fabrication Technology | NPN Transistor |
| Half Intensity Angle Degrees (°) | 30 |
| Lens Color | Black |
| Lens Shape Type | Domed |
| Material | Silicon |
| Maximum Collector Current (mA) | 50 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
| Maximum Collector-Emitter Voltage (V) | 20 |
| Maximum Dark Current (nA) | 100 |
| Maximum Emitter-Collector Voltage (V) | 7 |
| Maximum Light Current (uA) | 9000 |
| Maximum Operating Temperature (°C) | 100 |
| Maximum Power Dissipation (mW) | 100 |
| Minimum Operating Temperature (°C) | -40 |
| Number of Channels per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| Peak Wavelength (nm) | 860 |
| Phototransistor Type | Phototransistor |
| Pin Count | 2 |
| Polarity | NPN |
| PPAP | Unknown |
| Standard Package Name | SMD |
| Supplier Package | SMD |
| Type | IR Chip |
| Viewing Orientation | Top View |
| Angle of Half Sensitivity | 30 ° |
| Collector Current | 50mA |
| Maximum Dark Current | 100nA |
| Maximum Light Current | 9000µA |
| Maximum Wavelength Detected | 970nm |
| Minimum Wavelength Detected | 790nm |
| Mounting Type | Surface Mount |
| Number of Channels | 1 |
| Number of Pins | 2 |
| Spectral Range of Sensitivity | 790 → 970 nm |
| Spectrums Detected | Infrared |
| Width | 2.3mm |
| Collector Current (Ic) | 50mA |
| Collector Dark Current | 1nA |
| Collector Emitter Voltage | 20V |
| Dissipation Power(Max) | 100mW |
| Peak Wavelength | 860nm |
| Transistor Type | NPN |
| Вес, г | 0.27 |
