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VEMT2023X01, Фототранзистор, 860 нм, 70 °, 2 вывод(-ов), SMD

Фототранзистор Chip Silicon 860nm Automotive 2-Pin SMD T / R

Automotive	Yes
ECCN (US)	EAR99
EU RoHS	Compliant
Fabrication Technology	NPN
Half Intensity Angle Degrees (°)	35
Lens Shape Type	Domed
Material	Silicon
Maximum Collector Current (mA)	50
Maximum Collector-Emitter Saturation Voltage (V)	0.4
Maximum Collector-Emitter Voltage (V)	20
Maximum Dark Current (nA)	100
Maximum Emitter-Collector Voltage (V)	7
Maximum Light Current (uA)	4100
Maximum Operating Temperature (°C)	100
Maximum Power Dissipation (mW)	100
Minimum Operating Temperature (°C)	-40
Mounting	Surface Mount
Packaging	Tape and Reel
Part Status	Active
PCB changed	2
Peak Wavelength (nm)	860
Phototransistor Type	Phototransistor
Pin Count	2
Polarity	NPN
PPAP	Unknown
Standard Package Name	SMD
Supplier Package	SMD
Type	Chip
Viewing Orientation	Top View
Half Intensity Angle Degrees - (??)	35
Maximum Collector Current - (mA)	50
Maximum Collector-Emitter Saturation Voltage - (V)	0.4
Maximum Collector-Emitter Voltage - (V)	20
Maximum Dark Current - (nA)	100
Maximum Emitter-Collector Voltage - (V)	7
Maximum Light Current - (uA)	4100
Maximum Power Dissipation - (mW)	100
Military	No
Operating Temperature - (??C)	-40~100
Peak Wavelength - (nm)	860
Current - Collector (Ic) (Max)	50 mA
Current - Dark (Id) (Max)	1 nA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	-40°C ~ 100°C
Orientation	Top View
Package / Case	2-SMD, Gull Wing
Power - Max	100 mW
Qualification	AEC-Q101
Viewing Angle	70°
Voltage - Collector Emitter Breakdown (Max)	20 V
Wavelength	860nm
Вес, г	0.181