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VS-GT100DA120UF, IGBT Modules 1200V, 100A IGBT SOT-227 Bplr Tnstr
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VS-GT100DA120UF, IGBT Modules 1200V, 100A IGBT SOT-227 Bplr Tnstr

Semiconductors\Discrete Semiconductors\Transistors\IGBT ModulesIGBT Power Modules Vishay IGBT Power Modules feature trench PT IGBT technology and are geared toward TIG welding machines. These IGBTs combine Hexfred and Fret PT diode technology and meet UL standards. Features like INT-A-PAK allow for designs with limited height requirements on the board that need high voltages and currents. These modules are also used in applications like appliance motor drives, electric vehicle motor drives, solar inverters, UPS and power factor correction converters. Learn More
Brand Vishay Semiconductors
Collector- Emitter Voltage VCEO Max 1.2 kV
Configuration Single
Continuous Collector Current at 25 C 187 A
Factory Pack Quantity 160
Gate-Emitter Leakage Current 220 nA
Manufacturer Vishay
Maximum Operating Temperature +150 C
Minimum Operating Temperature -40 C
Mounting Style SMD/SMT
Package/Case SOT-227-4
Pd - Power Dissipation 890 W
Product Category IGBT Modules
Product Type IGBT Modules
Product IGBT Silicon Modules
Subcategory IGBTs
Technology Si
Channel Type N
Maximum Collector Emitter Voltage 1200 V
Maximum Continuous Collector Current 187 A
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 890 W
Mounting Type Panel Mount
Number of Transistors 1
Package Type SOT-227
Pin Count 4
Вес, г 30

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