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VS-GT100DA120UF, IGBT Modules 1200V, 100A IGBT SOT-227 Bplr Tnstr
Semiconductors\Discrete Semiconductors\Transistors\IGBT ModulesIGBT Power Modules Vishay IGBT Power Modules feature trench PT IGBT technology and are geared toward TIG welding machines. These IGBTs combine Hexfred and Fret PT diode technology and meet UL standards. Features like INT-A-PAK allow for designs with limited height requirements on the board that need high voltages and currents. These modules are also used in applications like appliance motor drives, electric vehicle motor drives, solar inverters, UPS and power factor correction converters. Learn More
Brand | Vishay Semiconductors |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Configuration | Single |
Continuous Collector Current at 25 C | 187 A |
Factory Pack Quantity | 160 |
Gate-Emitter Leakage Current | 220 nA |
Manufacturer | Vishay |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -40 C |
Mounting Style | SMD/SMT |
Package/Case | SOT-227-4 |
Pd - Power Dissipation | 890 W |
Product Category | IGBT Modules |
Product Type | IGBT Modules |
Product | IGBT Silicon Modules |
Subcategory | IGBTs |
Technology | Si |
Channel Type | N |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Continuous Collector Current | 187 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 890 W |
Mounting Type | Panel Mount |
Number of Transistors | 1 |
Package Type | SOT-227 |
Pin Count | 4 |
Вес, г | 30 |