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WP7113PD1BT/BD-P22, Photodiodes 5mm PHOTODIODE
Sensors\Optical Sensors\PhotodiodesNPN Si Phototransistors Kingbright NPN Si Phototransistors are made with NPN silicon phototransistor chips. These phototransistors are mechanically and spectrally matched to infrared-emitting LED lamps. The NPN Si phototransistors operate at a temperature range from -40°C to +85°C. These phototransistors feature a maximum collector-to-emitter voltage of 30V and an emitter-to-collector voltage of 5V. Typical applications include infrared applied systems, optoelectronic switches, and photodetector control circuits.
| Brand | Kingbright |
| Dark Current | 10 nA |
| Factory Pack Quantity | 1000 |
| Fall Time | 6 ns |
| Half Intensity Angle Degrees | 20 deg |
| Manufacturer | Kingbright |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Through Hole |
| Package/Case | T-1 3/4 |
| Packaging | Bulk |
| Pd - Power Dissipation | 150 mW |
| Peak Wavelength | 940 nm |
| Photocurrent | 2 uA |
| Product Category | Photodiodes |
| Product Type | Photodiodes |
| Product | Photodiodes |
| Rise Time | 6 ns |
| Subcategory | Optical Detectors & Sensors |
| Vr - Reverse Voltage | 170 V |
| Вес, г | 0.31 |
