Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
DDA123JU-7-F, SOT-363 BIpolar TransIstors - BJT
Transistors/Thyristors\Digital Transistors
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| DC Current Gain (hFE@Ic,Vce) | 80@10mA, 5V |
| Power Dissipation (Pd) | 200mW |
| Brand | Diodes Incorporated |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Configuration | Dual |
| Continuous Collector Current | 100 mA |
| DC Collector/Base Gain hfe Min | 80 |
| DC Current Gain hFE Max | 80 |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-363-6 |
| Pd - Power Dissipation | 200 mW |
| Peak DC Collector Current | 100 mA |
| Product Category | Bipolar Transistors-Pre-Biased |
| Product Type | BJTs-Bipolar Transistors-Pre-Biased |
| Series | DDA123 |
| Subcategory | Transistors |
| Transistor Polarity | PNP |
| Typical Input Resistor | 2.2 kOhms |
| Typical Resistor Ratio | 0.05 |
| Вес, г | 0.03 |
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