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DDTA123TCA-7-F, TRANS PREBIAS PNP 200MW SOT23-3

Биполярный транзистор с предварительным смещением (BJT) PNP - с предварительным смещением 50 В 100 мА 250 МГц 200 мВт поверхностный монтаж SOT-23-3

Base Product Number	DDTA123 ->
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V
ECCN	EAR99
Frequency - Transition	250MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	200mW
REACH Status	REACH Unaffected
Resistor - Base (R1)	2.2 kOhms
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-23-3
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300mV @ 500ВµA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50V
Brand	Diodes Incorporated
Collector- Emitter Voltage VCEO Max	50 V
Configuration	Single
Continuous Collector Current	100 mA
DC Collector/Base Gain hfe Min	100
Factory Pack Quantity: Factory Pack Quantity	3000
Manufacturer	Diodes Incorporated
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Peak DC Collector Current	100 mA
Product Category	Bipolar Transistors-Pre-Biased
Product Type	BJTs-Bipolar Transistors-Pre-Biased
Series	DDTA123
Subcategory	Transistors
Transistor Polarity	PNP
Typical Input Resistor	2.2 kOhms
Collector Current (Ic)	100mA
Collector-Emitter Breakdown Voltage (Vceo)	50V
DC Current Gain (hFE@Ic,Vce)	100@1mA, 5V
Power Dissipation (Pd)	200mW
Вес, г	0.008