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Цена по запросу
DDTC115TE-7-F, Digital Transistors PRE-BIAS NPN 150mW
Semiconductors\Discrete Semiconductors\Transistors\Digital Transistors
| Brand | Diodes Incorporated |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Single |
| Continuous Collector Current | 0.1 A |
| DC Collector/Base Gain hfe Min | 100 |
| DC Current Gain hFE Max | 600 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-523-3 |
| Pd - Power Dissipation | 150 mW |
| Peak DC Collector Current | 100 mA |
| Product Category | Bipolar Transistors-Pre-Biased |
| Product Type | BJTs-Bipolar Transistors-Pre-Biased |
| Series | DDTC115 |
| Subcategory | Transistors |
| Transistor Polarity | NPN |
| Type | NPN Small Signal Surface Mount Transistor |
| Typical Input Resistor | 100 kOhms |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| DC Current Gain (hFE@Ic,Vce) | 100@1mA, 5V |
| Power Dissipation (Pd) | 150mW |
| Вес, г | 0.01 |
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