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DTA043EEBTL, Digital Transistors PNP Digital Transtr w/built in resistors
Semiconductors\Discrete Semiconductors\Transistors\Digital TransistorsResistor-equipped bipolar transistors, also known as “Digital Transistors” or “Bias Resistor Transistors”, incorporating one or two integrated resistors.
| Collector Current (Ic) | 100mA |
| Collector Cut-Off Current (Icbo) | - |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 150mV@5mA, 500uA |
| DC Current Gain (hFE@Ic,Vce) | 20@5mA, 10V |
| Power Dissipation (Pd) | 150mW |
| Transistor Type | One PNP-Pre-Biased |
| Transition Frequency (fT) | 250MHz |
| Base-Emitter Resistor | 4.7kΩ |
| Maximum Collector Emitter Voltage | -50 V |
| Maximum DC Collector Current | -100 mA |
| Maximum Emitter Base Voltage | 50 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 150 mW |
| Minimum DC Current Gain | 20 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-416FL |
| Pin Count | 3 |
| Transistor Configuration | Common Emitter |
| Typical Input Resistor | 4.7 kΩ |
| Typical Resistor Ratio | 1 |
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