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![IGW25T120FKSA1, Транзистор IGBT Chip N-CH 1200В 25А 190Вт [PG-TO-247-3]](/images/placeholder.jpg)
Цена по запросу
IGW25T120FKSA1, Транзистор IGBT Chip N-CH 1200В 25А 190Вт [PG-TO-247-3]
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Maximum Operating Temperature +150 °C
Length 16.13mm
Transistor Configuration Single
Brand Infineon
Maximum Collector Emitter Voltage 1200 V
Maximum Continuous Collector Current 50 A
Package Type TO-247
Maximum Power Dissipation 190 W
Energy Rating 7mJ
Mounting Type Through Hole
Minimum Operating Temperature -40 °C
Width 5.21mm
Height 21.1mm
Pin Count 3
Dimensions 16.13 x 5.21 x 21.1mm
Maximum Gate Emitter Voltage ±20V
Channel Type N
Gate Capacitance 1860pF
Вес, г 7.5
Infineon Technologies
| Наименование | IGW25T120FKSA1 |
| Производитель | Infineon Technologies |
| Нормоупаковка | 30 шт |
