Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
IKW40N60H3FKSA1, Биполярный транзистор IGBT, 600 В, 80 А, 306 Вт
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Maximum Operating Temperature +175 °C
Length 16.13mm
Transistor Configuration Single
Brand Infineon
Maximum Collector Emitter Voltage 600 V
Maximum Continuous Collector Current 80 A
Package Type TO-247
Maximum Power Dissipation 306 W
Energy Rating 2.12mJ
Mounting Type Through Hole
Minimum Operating Temperature -40 °C
Width 5.21mm
Height 21.1mm
Pin Count 3
Dimensions 16.13 x 5.21 x 21.1mm
Maximum Gate Emitter Voltage ±20V
Channel Type N
Gate Capacitance 2190pF
Вес, г 7.5
Infineon Technologies
| Наименование | IKW40N60H3FKSA1 |
| Производитель | Infineon Technologies |
| Описание Eng | IGBT Chip N-CH 600V 80A 306 W Automotive 3-Pin(3+Tab) TO-247 Tube |
| Тип упаковки | Tube (туба) |
| Нормоупаковка | 30 шт |
| Корпус | PG-TO-247-3 |
