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MUN5211T1G, Digital Transistors SS BR XSTR NPN 50V

Semiconductors\Discrete Semiconductors\Transistors\Digital Transistors Описание Транзистор: NPN, биполярный, BRT, 50В, 0,1А, 310мВт, SOT323 Характеристики Категория Транзистор Тип биполярный Вид NPN

Категория	Транзистор
Тип	биполярный
Вид	NPN
кол-во в упаковке	3000
Maximum Collector Base Voltage	50 V
Maximum Collector Emitter Voltage	50 V
Maximum DC Collector Current	100 mA
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	310 mW
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-323(SC-70)
Pin Count	3
Transistor Configuration	Single
Transistor Type	NPN
Automotive	No
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Collector-Emitter Saturation Voltage (V)	0.25@0.3mA@10mA
Maximum Collector-Emitter Voltage (V)	50
Maximum Continuous DC Collector Current (mA)	100
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	310
Minimum DC Current Gain	35@5mA@10V
Minimum DC Current Gain Range	30 to 50
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
PPAP	No
Standard Package Name	SOT
Supplier Package	SC-70
Type	NPN
Typical Input Resistor (kOhm)	10
Typical Resistor Ratio	1
Вес, г	0.031