Как мы работаем

По сертификату
"военный регистр"

Только с Юр. Лицами,
мелкий и крупный опт

Цена по запросу

PDTC114YQB-QZ 3 NPN Digital Transistor, 100 mA, 50 V DFN1110D-3

Semiconductors\Discrete Semiconductors\Bipolar TransistorsThe Nexperia NPN resistor equipped transistor (RET) family in an ultra small DFN1110D-3 (SOT8015) leadless surface mounted device (SMD) having plastic package with side-wettable flanks.

Maximum Collector Emitter Voltage	50 V
Maximum DC Collector Current	100 mA
Mounting Type	Surface Mount
Number of Elements per Chip	3
Package Type	DFN1110D-3
Transistor Type	NPN
Brand	Nexperia
Collector- Emitter Voltage VCEO Max	50 V
Configuration	Single
Continuous Collector Current	100 mA
DC Collector/Base Gain hFE Min	100 at 5 mA, 5 V
Emitter- Base Voltage VEBO	6 V
Factory Pack Quantity: Factory Pack Quantity	5000
Manufacturer	Nexperia
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package/Case	DFN1110D-3
Part # Aliases	934663486147
Pd - Power Dissipation	420 mW
Product Category	Bipolar Transistors-Pre-Biased
Product Type	BJTs-Bipolar Transistors-Pre-Biased
Qualification	AEC-Q101
Subcategory	Transistors
Transistor Polarity	NPN
Typical Input Resistor	10 kOhms, 47 kOhms
Typical Resistor Ratio	4.7
Вес, г	1